Part Image

MMBFJ310LT3G - onsemi

Description: Drain and Source are interchangable; SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Download MMBFJ310LT3G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMBFJ310LT3G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
click to zoom
3D Models
MMBFJ310LT3G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
click to zoom

MMBFJ310LT3G Details

  • Manufacturer Part Number:

    MMBFJ310LT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBFJ310LT3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MMBFJ310LT3G is -55°C to 150°C.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and dry environment, and avoid exceeding the maximum ratings specified in the datasheet.
  • Use a multi-layer PCB with a solid ground plane, keep the transistor away from heat sources, and use thermal vias to dissipate heat. A heat sink may be required for high-power applications.
  • Yes, the MMBFJ310LT3G can be used in switching applications, but ensure that the switching frequency is within the recommended range and that the transistor is properly biased to minimize switching losses.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the transistor in an ESD-safe environment.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMBFJ310LT3G Overview

Use the download button to access the MMBFJ310LT3G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMBFJ, or try a keyword search, such as RF Small Signal Field-Effect Transistors

Parts related to MMBFJ310LT3G

Showing 0 results

MMBFJ310LT3G Alternates

Showing results

Image Part Number Model
Part Image MMBFJ310 Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET

Part Image MMBFJ310 Texas Instruments

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB

Part Image MMBFJ310 EDI Diodes (Electronic Devices Inc)

RF Small Signal Field-Effect Transistor, 1-Element, Silicon

Part Image MMBFJ310LT3 onsemi

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB

Part Image MMBFJ310L99Z Texas Instruments

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-236AB

For a full list of alternate parts for MMBFJ310LT3G, check out Findchips.com