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MMBT2369LT1G - onsemi

Description: Bipolar (BJT) Transistor NPN 15 V 200 mA 225 mW Surface Mount SOT-23-3 (TO-236)

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PCB Footprints
MMBT2369LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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3D Models
MMBT2369LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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MMBT2369LT1G Details

  • Manufacturer Part Number:

    MMBT2369LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    500 MHz

  • Turn-off Time-Max (toff):

    18 ns

  • Turn-on Time-Max (ton):

    12 ns

MMBT2369LT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for MMBT2369LT1G is -55°C to 150°C.
  • To ensure stability, it's recommended to use a bypass capacitor (e.g., 10nF to 100nF) between the base and emitter pins, and to minimize the length of the leads and PCB traces.
  • The maximum allowable current for the MMBT2369LT1G is 100mA. Exceeding this limit may cause the device to overheat or fail.
  • To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an anti-static wrist strap, and ensure that the PCB and components are properly grounded.
  • Yes, the MMBT2369LT1G can be used in switching applications, but ensure that the device is properly biased and that the switching frequency is within the recommended range (typically up to 100 kHz).

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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MMBT2369LT1G Overview

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Part Image FMMT2369TA Zetex / Diodes Inc

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Part Image HS2369A Microsemi Corporation (now Microchip)

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Part Image MMBT2369LT1 onsemi

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Part Image PMBT2369-TAPE-13 NXP Semiconductors

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For a full list of alternate parts for MMBT2369LT1G, check out Findchips.com