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MMBT4126LT1G - onsemi

Description: Moisture Sensitivity Level: 1; ESD Rating--Human Body Model: >4000 V; Machine Model: >400 V; Pb-Free Package is Available

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PCB Footprints
MMBT4126LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
MMBT4126LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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MMBT4126LT1G Details

  • Manufacturer Part Number:

    MMBT4126LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

MMBT4126LT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for MMBT4126LT1G is -55°C to 150°C.
  • To ensure stability, it's recommended to use a bypass capacitor (e.g., 10nF) between the base and emitter pins, and to minimize the length of the leads and PCB traces.
  • The maximum allowable power dissipation for MMBT4126LT1G is 625mW at 25°C free-air temperature.
  • Yes, MMBT4126LT1G can be used as a switch, but it's essential to ensure that the transistor is properly biased and that the collector-emitter voltage is within the recommended range.
  • To prevent ESD damage, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures.

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MMBT4126LT1G Overview

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