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MMBT5089 - onsemi

Description: Obsolete - NPN Bipolar Transistor

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Symbol
MMBT5089 - onsemi - PCB symbol
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PCB Footprints
MMBT5089 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O
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3D Models
MMBT5089 - onsemi - 3D model - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O
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MMBT5089 Details

  • Manufacturer Part Number:

    MMBT5089

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    400

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MMBT5089 Frequently Asked Questions (FAQs)

  • The MMBT5089 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 85°C for optimal performance.
  • To ensure linear operation, the MMBT5089 should be biased with a collector-emitter voltage (Vce) between 1V to 10V, and a base-emitter voltage (Vbe) around 0.7V. The collector current (Ic) should be limited to the recommended maximum value.
  • The MMBT5089 can handle a maximum collector current (Ic) of 500mA. Exceeding this value may cause the transistor to overheat or fail.
  • To protect the MMBT5089 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container. Avoid touching the device's pins or leads.
  • Yes, the MMBT5089 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). A dedicated switch transistor like the 2N3904 or 2N2222 may be a better choice.

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MMBT5089 Overview

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MMBT5089 Alternates

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Part Image MMBT5089LT1 Rochester Electronics LLC

50mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AF, CASE 318-08, 3 PIN
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Part Image CMPT5089TR13 Central Semiconductor Corp

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Part Image MMBT5089-7 Diodes Incorporated

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Part Image TMPT5089 Allegro MicroSystems LLC

Small Signal Bipolar Transistor, 0.01A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
For a full list of alternate parts for MMBT5089, check out Findchips.com