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MMBT5179 - onsemi

Description: RF Bipolar Transistors NPN RF Transistor

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MMBT5179 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-ren3
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MMBT5179 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23-ren3
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MMBT5179 Details

  • Manufacturer Part Number:

    MMBT5179

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    1 pF

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.225 W

  • Power Dissipation-Max (Abs):

    0.225 W

  • Power Gain-Min (Gp):

    15 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    900 MHz

  • VCEsat-Max:

    0.4 V

MMBT5179 Frequently Asked Questions (FAQs)

  • The MMBT5179 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 85°C for optimal performance.
  • To ensure linear operation, the MMBT5179 should be biased with a collector-emitter voltage (Vce) between 1V to 10V, and a base-emitter voltage (Vbe) around 0.7V. The collector current (Ic) should be limited to the recommended maximum value.
  • The maximum collector current (Ic) for the MMBT5179 is 500mA. Exceeding this value may cause the transistor to overheat or fail.
  • Yes, the MMBT5179 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). A dedicated switching transistor like the 2N3904 or 2N2222 may be a better choice.
  • To protect the MMBT5179 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container. Avoid touching the device's pins or leads with bare hands.

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Part Image MMBT5179 Texas Instruments

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB