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MMBT5551 - Diodes Incorporated

Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 350 mW Surface Mount SOT-23-3 ,-55°C ~ 150°C

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PCB Footprints
MMBT5551 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2026-1.16
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3D Models
MMBT5551 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - SOT-23_2026-1.16
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MMBT5551 Details

  • Manufacturer Part Number:

    MMBT5551

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Base Capacitance-Max:

    6 pF

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    255

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.35 W

  • Power Dissipation-Max (Abs):

    0.35 W

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.2 V

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MMBT5551 Overview

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