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MMBTA55-7-F - Diodes Incorporated

Description: Diodes Inc MMBTA55-7-F PNP Bipolar Transistor, -500 mA, -60 V, 3-Pin SOT-23

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MMBTA55-7-F - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - MMBTA55-7-F
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MMBTA55-7-F - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - MMBTA55-7-F
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MMBTA55-7-F Details

  • Manufacturer Part Number:

    MMBTA55-7-F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    255

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

  • VCEsat-Max:

    0.25 V

MMBTA55-7-F Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for the MMBTA55-7-F can be found in the Diodes Incorporated's packaging information document or in the IPC-7351 standard. A typical footprint would be a SOT-23 package with a 1.3mm x 0.8mm body size and a 0.5mm pitch.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves setting the base-emitter voltage (Vbe) between 0.6V to 0.8V and the collector-emitter voltage (Vce) within the recommended range. Additionally, ensure the transistor is operated within its recommended current and power dissipation limits.
  • The MMBTA55-7-F has a maximum junction temperature (Tj) of 150°C. To prevent overheating, ensure good thermal conduction by using a heat sink or a thermal pad, and keep the ambient temperature (Ta) below 70°C. Also, follow the recommended power dissipation (PD) and thermal resistance (RθJA) guidelines in the datasheet.
  • Yes, the MMBTA55-7-F can be used as a switch. However, consider the transistor's switching characteristics, such as the rise and fall times, and ensure the base drive is sufficient to minimize switching losses. Also, be aware of the transistor's saturation voltage (Vce(sat)) and ensure it is within the recommended range.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. When handling the transistor, avoid touching the pins, and use an anti-static bag or tube for storage.

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MMBTA55-7-F Overview

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