Part Image

MMBTH10-TP - MCC

Description: Small Signal Bipolar Transistors

Download MMBTH10-TP Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMBTH10-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-ren20
click to zoom
3D Models
MMBTH10-TP - MCC  - 3D model - SOT23 (3-Pin) - SOT-23-ren20
click to zoom

MMBTH10-TP Details

  • Manufacturer Part Number:

    MMBTH10-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.7 pF

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    650 MHz

MMBTH10-TP Frequently Asked Questions (FAQs)

  • The recommended storage temperature for MMBTH10-TP is -65°C to 150°C.
  • Yes, MMBTH10-TP is designed for high-reliability applications and is qualified to aerospace and defense standards.
  • The maximum allowable power dissipation for MMBTH10-TP is 500 mW at 25°C ambient temperature.
  • Yes, MMBTH10-TP is designed to operate in high-temperature environments up to 150°C.
  • Yes, MMBTH10-TP is RoHS compliant and meets the requirements of the European Union's Restriction of Hazardous Substances directive.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMBTH10-TP Overview

Use the download button to access the MMBTH10-TP schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMBTH, or try a keyword search, such as RF Small Signal Bipolar Transistors

Parts related to MMBTH10-TP

Showing 0 results

MMBTH10-TP Alternates

Showing results

Image Part Number Model
Part Image MMBTH10T/R7 PanJit Semiconductor

RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Image MMBTH10 Texas Instruments

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-236AB

Part Image MMBT3906 Vishay Intertechnologies

Transistor

Part Image MMBTH10 Lite-On Semiconductor Corporation

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Image MMBTH10_NL Fairchild Semiconductor Corporation

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

For a full list of alternate parts for MMBTH10-TP, check out Findchips.com