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MMBTH10 - onsemi

Description: Obsolete - NPN Bipolar Transistor

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PCB Footprints
MMBTH10 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE A
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3D Models
MMBTH10 - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE A
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MMBTH10 Details

  • Manufacturer Part Number:

    MMBTH10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.7 pF

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    650 MHz

  • VCEsat-Max:

    0.5 V

MMBTH10 Frequently Asked Questions (FAQs)

  • The MMBTH10 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, the base-emitter voltage (VBE) should be between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be at least 1V higher than the base-emitter voltage.
  • The MMBTH10 can handle a maximum continuous collector current (IC) of 500mA, and a peak current of 1A for a short duration (less than 100ms).
  • To protect the MMBTH10 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • Yes, the MMBTH10 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). A dedicated switch transistor like the 2N3904 or 2N2222 is a better choice.

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MMBTH10 Overview

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For a full list of alternate parts for MMBTH10, check out Findchips.com