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MMBTH81 - onsemi

Description: ON SEMICONDUCTOR - MMBTH81 - TRANSISTOR RF, PNP, SOT23

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PCB Footprints
MMBTH81 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - MMBTH81-1
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3D Models
MMBTH81 - onsemi  - 3D model - SOT23 (3-Pin) - MMBTH81-1
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MMBTH81 Details

  • Manufacturer Part Number:

    MMBTH81

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.85 pF

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236AA

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    600 MHz

  • VCEsat-Max:

    0.5 V

MMBTH81 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MMBTH81 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the recommended operating conditions to ensure reliability.
  • To ensure the MMBTH81 is properly biased, follow the recommended biasing conditions outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the recommended ranges. Additionally, ensure the device is operated within the recommended current and power dissipation limits to prevent overheating and ensure reliable operation.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conduction and heat dissipation. This can be achieved by using a thermal pad or heat sink, and ensuring good airflow around the device. Additionally, follow good PCB design practices, such as using a solid ground plane and minimizing thermal resistance between the device and the heat sink.
  • To handle ESD protection for the MMBTH81, follow proper ESD handling procedures during device handling and assembly. This includes using ESD-safe materials, grounding straps, and wrist straps. Additionally, consider incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design to protect the device from electrostatic discharge events.
  • To ensure the MMBTH81 remains reliable and functional, follow proper storage and handling procedures. This includes storing the devices in their original packaging, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the devices by the body, rather than the leads, to prevent mechanical stress.

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MMBTH81 Overview

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Part Image MMBTH81 Fairchild Semiconductor Corporation

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA

Part Image MMBTH81_NL Fairchild Semiconductor Corporation

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA