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MMBZ15VALYFHT116 - ROHM Semiconductor

Description: 12V, SOT-23, Dual Line, Anode Common, Automotive Transient Voltage Suppressor (AEC-Q101 Qualified)

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MMBZ15VALYFHT116 Details

  • Manufacturer Part Number:

    MMBZ15VALYFHT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-05-27

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    15.75 V

  • Breakdown Voltage-Min:

    14.25 V

  • Breakdown Voltage-Nom:

    15 V

  • Clamping Voltage-Max:

    21 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    40 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2; MIL-STD-883

  • Rep Pk Reverse Voltage-Max:

    12 V

  • Reverse Current-Max:

    0.005 µA

  • Reverse Test Voltage:

    12 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ15VALYFHT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for MMBZ15VALYFHT116 can be found in the ROHM Semiconductor's packaging specification document, which is usually available on their website. The document provides detailed information on the recommended pad layout, dimensions, and spacing for optimal assembly and reliability.
  • To handle the ESD sensitivity of MMBZ15VALYFHT116, it is recommended to follow proper ESD handling procedures during assembly, storage, and shipping. This includes using ESD-safe materials, grounding personnel and equipment, and using protective packaging. Additionally, consider implementing ESD protection circuits or devices in the design to prevent damage from electrostatic discharge.
  • The thermal resistance of MMBZ15VALYFHT116 is not explicitly stated in the datasheet. However, ROHM Semiconductor provides a thermal resistance junction-to-ambient (RθJA) value of 250°C/W for this device. This value can be used to estimate the junction temperature rise based on the power dissipation and ambient temperature.
  • Yes, MMBZ15VALYFHT116 is a high-reliability device suitable for use in demanding applications. ROHM Semiconductor has qualified this device to meet the requirements of AEC-Q101, which is a standard for automotive-grade components. Additionally, the device is manufactured using a robust process and has undergone rigorous testing to ensure its reliability and performance.
  • The optimal operating voltage for MMBZ15VALYFHT116 depends on the specific application and requirements. The datasheet provides a recommended operating voltage range of 10-16V. However, it is recommended to consult with ROHM Semiconductor's application notes or contact their technical support to determine the optimal operating voltage for your specific use case.

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