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MMBZ47VALT1G - onsemi

Description: Dual Common Anode Zener Diode Protection

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MMBZ47VALT1G Details

  • Manufacturer Part Number:

    MMBZ47VALT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.83

  • Breakdown Voltage-Max:

    49.35 V

  • Breakdown Voltage-Min:

    44.65 V

  • Breakdown Voltage-Nom:

    47 V

  • Clamping Voltage-Max:

    54 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS, 2 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    40 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    38 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    38 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ47VALT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MMBZ47VALT1G is -65°C to 150°C.
  • It is recommended to handle the MMBZ47VALT1G with an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage.
  • The maximum power dissipation for the MMBZ47VALT1G is 500 mW.
  • Yes, the MMBZ47VALT1G is suitable for high-reliability applications, such as aerospace, automotive, and industrial control systems.
  • Follow the recommended soldering profile and use a solder with a melting point below 260°C to prevent damage to the device.

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MMBZ47VALT1G Overview

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Part Image SZMMBZ47VALT1G onsemi

Trans Voltage Suppressor Diode, 40W, 38V V(RWM), Unidirectional, 2 Element, Silicon, TO-236