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MMBZ6V2ALYT116 - ROHM Semiconductor

Description: 3V, SOT-23, Dual Line, Anode Common Transient Voltage Suppressor

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MMBZ6V2ALYT116 - ROHM Semiconductor  - 3D model
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MMBZ6V2ALYT116 Details

  • Manufacturer Part Number:

    MMBZ6V2ALYT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-05-27

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    6.51 V

  • Breakdown Voltage-Min:

    5.89 V

  • Breakdown Voltage-Nom:

    6.2 V

  • Clamping Voltage-Max:

    8.7 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    24 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    IEC-61000-4-2; MIL-STD-883

  • Rep Pk Reverse Voltage-Max:

    3 V

  • Reverse Current-Max:

    0.2 µA

  • Reverse Test Voltage:

    3 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ6V2ALYT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the MMBZ6V2ALYT116 can be found in the ROHM Semiconductor's packaging specification document, which is usually available on their website. The document provides detailed information on the recommended pad layout, dimensions, and spacing for optimal soldering and reliability.
  • To prevent damage during assembly, it is recommended to handle the MMBZ6V2ALYT116 by the body, avoiding touching the leads or the glass diode. Use anti-static wrist straps, mats, or other ESD protection devices to prevent electrostatic discharge damage. Also, avoid bending or flexing the leads excessively, as this can cause mechanical stress and lead to failure.
  • The maximum allowable voltage for the MMBZ6V2ALYT116 is 6.2V, as specified in the datasheet. Exceeding this voltage can cause permanent damage to the device. It is recommended to ensure that the voltage rating is not exceeded during operation, and to provide adequate overvoltage protection if necessary.
  • The MMBZ6V2ALYT116 is rated for operation up to 150°C, but its performance and reliability may degrade at high temperatures. It is recommended to consult the datasheet and ROHM Semiconductor's application notes for guidance on using the device in high-temperature environments. Additionally, consider using a heat sink or other thermal management techniques to keep the device within its recommended operating temperature range.
  • The correct orientation of the MMBZ6V2ALYT116 can be determined by referring to the datasheet or the packaging specification document. The device has a polarity mark on the package, which indicates the cathode (negative) terminal. Ensure that the polarity mark is aligned with the corresponding pad on the PCB during assembly.

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MMBZ6V2ALYT116 Overview

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