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MMBZ6V8ALYFHT116 - ROHM Semiconductor

Description: 4.5V, SOT-23, Dual Line, Anode Common, Automotive Transient Voltage Suppressor (AEC-Q101 Qualified)

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MMBZ6V8ALYFHT116 Details

  • Manufacturer Part Number:

    MMBZ6V8ALYFHT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2020-05-27

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    7.14 V

  • Breakdown Voltage-Min:

    6.46 V

  • Breakdown Voltage-Nom:

    6.8 V

  • Clamping Voltage-Max:

    9.6 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    24 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    IEC-61000-4-2; MIL-STD-883

  • Rep Pk Reverse Voltage-Max:

    4.5 V

  • Reverse Current-Max:

    0.3 µA

  • Reverse Test Voltage:

    4.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBZ6V8ALYFHT116 Frequently Asked Questions (FAQs)

  • The recommended land pattern for MMBZ6V8ALYFHT116 can be found in the ROHM Semiconductor's package drawing document, which is usually available on their website. The document provides detailed information on the recommended pad layout, dimensions, and spacing for optimal assembly and reliability.
  • To handle the ESD sensitivity of MMBZ6V8ALYFHT116, it is recommended to follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, ensure that the device is handled in a controlled environment with minimal humidity and temperature fluctuations.
  • The maximum allowable voltage derating for MMBZ6V8ALYFHT116 depends on the specific application and operating conditions. As a general rule, it is recommended to derate the voltage by 10-20% to ensure reliable operation and to account for any voltage spikes or transients. However, it is recommended to consult with ROHM Semiconductor's application engineers or refer to their technical notes for specific guidance.
  • MMBZ6V8ALYFHT116 is rated for operation up to 150°C, but it is recommended to consult with ROHM Semiconductor's application engineers or refer to their technical notes for specific guidance on high-temperature applications. Additionally, ensure that the device is properly derated for temperature and that the operating conditions are within the recommended specifications.
  • To ensure the reliability of MMBZ6V8ALYFHT116 in high-reliability applications, it is recommended to follow ROHM Semiconductor's recommended assembly and handling procedures, as well as to implement robust testing and inspection protocols. Additionally, ensure that the device is operated within the recommended specifications and that any deviations from the recommended operating conditions are properly evaluated and mitigated.

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MMBZ6V8ALYFHT116 Overview

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