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MMDT2227-7-F - Diodes Incorporated

Description: Bipolar Transistors - BJT 40 / 60V 200mW COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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MMDT2227-7-F - Diodes Incorporated PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - MMDT2227-7-F-
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MMDT2227-7-F - Diodes Incorporated  - 3D model - SOT23 (6-Pin) - MMDT2227-7-F-
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MMDT2227-7-F Details

  • Manufacturer Part Number:

    MMDT2227-7-F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    6

  • Similar Group:

    TR011001YYYY100110089015

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

  • Turn-off Time-Max (toff):

    285 ns

  • Turn-on Time-Max (ton):

    35 ns

MMDT2227-7-F Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MMDT2227-7-F is a standard SOT23 package footprint with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper biasing, connect the base of the transistor to a voltage divider network that sets the base voltage to around 0.7V to 1V, and ensure the collector-emitter voltage is within the recommended operating range.
  • The maximum power dissipation of the MMDT2227-7-F is 625mW, and it is recommended to derate the power dissipation based on the ambient temperature and PCB thermal design.
  • Yes, the MMDT2227-7-F can be used as a switch in high-frequency circuits up to 100MHz, but it's essential to consider the transistor's transition frequency (ft) and ensure proper impedance matching to minimize signal reflections.
  • To protect the MMDT2227-7-F from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB design includes ESD protection components such as TVS diodes or ESD protection arrays.

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MMDT2227-7-F Overview

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