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MMRF2010NR1 - NXP

Description: RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V

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MMRF2010NR1 - NXP  - 3D model
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MMRF2010NR1 Details

  • Manufacturer Part Number:

    MMRF2010NR1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TO-270WB, 14 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Characteristic Impedance:

    50 Ω

  • Construction:

    COMPONENT

  • Gain:

    30.5 dB

  • Input Power-Max (CW):

    25 dBm

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Functions:

    1

  • Number of Terminals:

    14

  • Operating Frequency-Max:

    1090 MHz

  • Operating Frequency-Min:

    1030 MHz

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Power Supplies:

    50 V

  • RF/Microwave Device Type:

    NARROW BAND HIGH POWER

  • Surface Mount:

    YES

  • Technology:

    LDMOS

  • Terminal Finish:

    Tin (Sn)

  • VSWR-Max:

    10

MMRF2010NR1 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the edge of the board to minimize the length of the RF traces. A via-stitching technique can be used to connect the ground pins to the ground plane.
  • The optimal biasing point depends on the specific application and frequency of operation. A good starting point is to set Vd=5V, Idq=100mA, and Vg1=Vg2=2.5V. The biasing can be optimized further by adjusting the gate voltages to achieve the desired output power and efficiency.
  • The maximum safe operating temperature for the MMRF2010NR1 is 150°C. However, the device should be derated for temperatures above 125°C to ensure reliable operation.
  • The MMRF2010NR1 is a sensitive device and requires proper ESD protection. A diode array or a transient voltage suppressor (TVS) can be used to protect the device from ESD. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.
  • The recommended matching network for the MMRF2010NR1 depends on the specific application and frequency of operation. A pi-network or a T-network can be used to match the device to a 50Ω load. The matching network should be optimized for maximum power transfer and efficiency.

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MMRF2010NR1 Overview

Use the download button to access the MMRF2010NR1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MMRF2, or try a keyword search, such as RF/Microwave Amplifiers

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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