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MMUN2113LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
MMUN2113LT1G - onsemi - PCB symbol
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PCB Footprints
MMUN2113LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23
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3D Models
MMUN2113LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT23
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MMUN2113LT1G Details

  • Manufacturer Part Number:

    MMUN2113LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MMUN2113LT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating guidelines for the device. The datasheet provides a thermal derating curve, and the application note AND8325/D provides additional guidance on thermal management.
  • The MMUN2113LT1G has internal ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. The device can withstand a human body model (HBM) of 2 kV and a charged device model (CDM) of 1 kV.
  • Yes, the MMUN2113LT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, it's essential to consult with onsemi's automotive team to ensure the device meets the specific requirements of your application.
  • The recommended soldering conditions for the MMUN2113LT1G are 260°C for 10 seconds, with a peak temperature of 265°C. For rework, it's recommended to use a low-temperature soldering iron (less than 350°F) and a solder with a melting point below 180°C.

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MMUN2113LT1G Overview

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