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MMUN2131LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MMUN2131LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
MMUN2131LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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MMUN2131LT1G Details

  • Manufacturer Part Number:

    MMUN2131LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMUN2131LT1G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat effectively. Additionally, keeping the PCB traces as short and wide as possible can help reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Proper thermal design, such as using a heat sink or thermal interface material, can help keep the device within the recommended temperature range. Additionally, selecting components with high temperature ratings and using a reliable cooling system can also help.
  • The MMUN2131LT1G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap or mat, and ensuring that the device is not exposed to static electricity during handling or storage.
  • Yes, the MMUN2131LT1G is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101, which is a standard for automotive-grade semiconductor devices. However, it's essential to follow the recommended operating conditions and to perform thorough testing and validation to ensure the device meets the specific requirements of the application.
  • To troubleshoot issues with the MMUN2131LT1G, start by reviewing the datasheet and application notes to ensure that the device is being used within the recommended operating conditions. Check for proper power supply, decoupling, and layout. Use oscilloscopes or logic analyzers to monitor the device's inputs and outputs, and consult onsemi's technical support resources or application notes for guidance on specific issues.

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MMUN2131LT1G Overview

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Part Image MMUN2131LT1 Rochester Electronics LLC

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN

Part Image MMUN2131LT3 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB