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MMUN2233LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
MMUN2233LT1G - onsemi - PCB symbol
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PCB Footprints
MMUN2233LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
MMUN2233LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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MMUN2233LT1G Details

  • Manufacturer Part Number:

    MMUN2233LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 10

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMUN2233LT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation. Use thermal interface material (TIM) for improved heat transfer.
  • Use a shielded enclosure, keep sensitive components away from the MMUN2233LT1G, and ensure proper grounding and decoupling. Implement EMI filters and shielding on cables and connectors.
  • The MMUN2233LT1G is rated for operation up to 150°C junction temperature. In harsh environments, expect a lifespan of 10-15 years with proper thermal management and derating. Consult onsemi's reliability report for more information.
  • Yes, the MMUN2233LT1G is suitable for high-reliability applications. However, consult onsemi's documentation for specific screening and qualification requirements for aerospace and defense applications.
  • Use onsemi's evaluation board and development tools to isolate issues. Check for proper power sequencing, decoupling, and thermal management. Consult onsemi's application notes and technical support for guidance.

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MMUN2233LT1G Overview

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