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MOCD223R2M - onsemi

Description: DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage; Minimum BVCEO of 30 V Guaranteed; Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing; High Current Transfer Ratio of 500% Minimum at IF= 1 mA; Safety and Regulatory Approvals:; UL1577, 2,500 VACRMS for 1 Minute

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MOCD223R2M - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - 8-SOIC
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MOCD223R2M Details

  • Manufacturer Part Number:

    MOCD223R2M

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751DZ

  • Country Of Origin:

    Thailand

  • HTS Code:

    8541.40.80.00

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    8

  • Additional Feature:

    UL RECOGNIZED, VDE APPROVED

  • Coll-Emtr Bkdn Voltage-Min:

    30 V

  • Configuration:

    SEPARATE, 2 CHANNELS

  • Current Transfer Ratio-Min:

    500%

  • Current Transfer Ratio-Nom:

    1000%

  • Dark Current-Max:

    50 nA

  • Forward Current-Max:

    0.06 A

  • Forward Voltage-Max:

    1.3 V

  • Isolation Voltage-Max:

    2500 V

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Elements:

    2

  • On-State Current-Max:

    0.15 A

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Optoelectronic Device Type:

    DARLINGTON OUTPUT OPTOCOUPLER

  • Packing Method:

    TR

  • Power Dissipation-Max:

    0.15 W

  • Response Time-Max:

    0.00001 s

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

MOCD223R2M Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper pad for heat sinking.
  • Implement a heat sink with a thermal interface material, ensure good airflow, and consider derating the device's power handling at high temperatures (above 85°C).
  • The maximum allowable voltage stress is 1.5 times the maximum rated voltage (VDRM) for a duration of 10 ms. Exceeding this may cause device damage.
  • Implement a transient voltage suppression (TVS) diode or a metal-oxide varistor (MOV) in parallel with the device to absorb voltage spikes and surges.
  • Store the devices in a dry, cool place (below 30°C and 60% RH) in their original packaging or with a desiccant to prevent moisture absorption.

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MOCD223R2M Overview

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