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MPSH10 - onsemi

Description: RF Transistor NPN 25V 650MHz 350mW Through Hole

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Symbol
MPSH10 - onsemi - PCB symbol
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PCB Footprints
MPSH10 - onsemi PCB footprint - Other - Other - TO−92 (TO−226) CASE 29−11 ISSUE AM_2024
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3D Models
MPSH10 - onsemi - 3D model - Other - TO−92 (TO−226) CASE 29−11 ISSUE AM_2024
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MPSH10 Details

  • Manufacturer Part Number:

    MPSH10

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    TO-226, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    0.7 pF

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.35 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    650 MHz

  • VCEsat-Max:

    0.5 V

MPSH10 Frequently Asked Questions (FAQs)

  • The maximum SOA for the MPSH10 is typically defined by the voltage and current ratings. The transistor can handle a maximum voltage of 400V and a maximum current of 10A. However, it's essential to ensure that the device operates within the recommended SOA to prevent damage or degradation.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, ensure that the base-emitter voltage (Vbe) is within the recommended range (typically 0.6-0.8V) and that the collector-emitter voltage (Vce) is within the recommended range (typically 1-5V) for optimal performance.
  • The recommended heatsink design for the MPSH10 involves using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. The heatsink should have a minimum thermal resistance of 1°C/W and a surface finish that ensures good thermal contact with the transistor. A heatsink with a large surface area and a low thermal resistance is recommended to ensure efficient heat dissipation.
  • Yes, the MPSH10 can be used in switching applications, but it's essential to ensure that the transistor is properly biased and that the switching frequency is within the recommended range (typically up to 100 kHz). Additionally, consider the transistor's rise and fall times, and ensure that the switching waveform is within the recommended specifications to prevent damage or degradation.
  • To protect the MPSH10 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the transistor is properly grounded during handling and that all equipment is properly grounded. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design to protect the transistor from ESD events.

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MPSH10 Overview

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MPSH10 Alternates

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Image Part Number Model
Part Image MPSH10RLRP onsemi

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Part Image MPSH10RLRAG onsemi

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Part Image MPSH10RLRF Motorola Semiconductor Products

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Part Image MPSH10RLRE onsemi

RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Part Image MPSH10RLRPG onsemi

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
For a full list of alternate parts for MPSH10, check out Findchips.com