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MPSH11 - onsemi

Description: NPN RF Transistor

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MPSH11 - onsemi PCB footprint - Other - Other - TO127P254X732-3
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MPSH11 - onsemi  - 3D model - Other - TO127P254X732-3
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MPSH11 Details

  • Manufacturer Part Number:

    MPSH11

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    TO-226AA, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.7 pF

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    650 MHz

MPSH11 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MPSH11 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 1.5W at 25°C, and to ensure that the voltage and current ratings are not exceeded.
  • To ensure the MPSH11 is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The exact biasing conditions will depend on the specific application and the desired performance characteristics.
  • The maximum frequency of operation for the MPSH11 is not explicitly stated in the datasheet, but it is generally limited by the transistor's transition frequency (fT), which is around 300 MHz for the MPSH11. However, the actual frequency of operation will depend on the specific application and the device's parasitic capacitances and inductances.
  • Thermal management is critical for the MPSH11, as excessive heat can lead to reduced performance and reliability. A heat sink or thermal pad can be used to dissipate heat, and the device should be mounted on a PCB with good thermal conductivity. The maximum junction temperature (TJ) should not exceed 150°C, and the device should be operated within the recommended power dissipation limits.
  • The MPSH11 has a human body model (HBM) ESD rating of 2 kV, and a machine model (MM) ESD rating of 200 V. To ensure ESD protection, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and assembly procedures to prevent ESD damage.

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MPSH11 Overview

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For a full list of alternate parts for MPSH11, check out Findchips.com