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MPSH81 - onsemi

Description: RF TRANS PNP 20V 600MHZ TO92-3

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MPSH81 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-92 1
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MPSH81 - onsemi  - 3D model - Transistor Outline, Vertical - TO-92 1
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MPSH81 Details

  • Manufacturer Part Number:

    MPSH81

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • Manufacturer Package Code:

    ZA03D

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.85 pF

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    600 MHz

  • VCEsat-Max:

    0.5 V

MPSH81 Frequently Asked Questions (FAQs)

  • The MPSH81 has a maximum safe operating area (SOA) of 10A, 80V, and 1ms. This means the transistor can handle a maximum current of 10A, voltage of 80V, and pulse duration of 1ms without damage.
  • To ensure linear operation, the MPSH81 requires a bias current of around 1-2mA. This can be achieved by using a voltage divider network or a current source to set the base-emitter voltage (Vbe) to around 0.7V.
  • The MPSH81 is suitable for switching frequencies up to 100kHz. However, the actual switching frequency depends on the specific application, layout, and design requirements.
  • While the MPSH81 can handle high currents, it's not recommended for high-current switching applications due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). For high-current switching, consider using a transistor with a higher current gain and lower saturation voltage.
  • To protect the MPSH81 from ESD, use proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits, such as diodes or resistors, in the design to prevent damage from static electricity.

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MPSH81 Overview

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Part Image MPSH81/D75Z Texas Instruments

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Part Image MPSH81/D26Z Texas Instruments

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Part Image MPSH81_D26Z Fairchild Semiconductor Corporation

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-92, LEAD FREE PACKAGE-3

Part Image MPSH81 Central Semiconductor Corp

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For a full list of alternate parts for MPSH81, check out Findchips.com