Part Image

MRF136Y - MACOM

Description: Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02

Download MRF136Y Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
MRF136Y - MACOM  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

MRF136Y Details

  • Manufacturer Part Number:

    MRF136Y

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Pin Count:

    4

  • Manufacturer Package Code:

    CASE 319B-02

  • ECCN Code:

    EAR99

  • Manufacturer:

    MACOM

  • YTEOL:

    6.85

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    65 V

  • Drain Current-Max (ID):

    5 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRF136Y Frequently Asked Questions (FAQs)

  • The maximum SOA for the MRF136Y is typically defined by the device's voltage and current ratings. However, MACOM recommends consulting their application notes or contacting their technical support for specific SOA guidance.
  • To optimize thermal performance, ensure proper heat sinking, use a thermally conductive interface material, and maintain a low thermal resistance between the device and heat sink. Consult MACOM's thermal management guidelines for more information.
  • MACOM recommends a low-inductance, single-point grounding scheme, with the device's source pin connected to a solid ground plane. A 4-layer PCB with a dedicated ground plane is recommended. Consult MACOM's application notes for more detailed guidance.
  • Handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Consult MACOM's ESD protection guidelines for more information.
  • Consult MACOM's application notes and datasheet for recommended drive and biasing conditions. Typically, a voltage-controlled current source is recommended, with a gate voltage range of 0 to -5V and a drain voltage range of 0 to 50V.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

MRF136Y Overview

Use the download button to access the MRF136Y 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRF13, or try a keyword search, such as Power Field-Effect Transistors

Parts related to MRF136Y

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

MRF136Y Alternates

Showing results

Image Part Number Model
Part Image MRF136Y TE Connectivity

Power Field-Effect Transistor, 5A I(D), N-Channel, Metal-oxide Semiconductor FET

Part Image BLF244,112 NXP Semiconductors

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET