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MRF173 - MACOM

Description: RF MOSFET Line 80W, 175MHz, 28V

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MRF173 Details

  • Manufacturer Part Number:

    MRF173

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Pin Count:

    4

  • Manufacturer Package Code:

    CASE 211-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    MACOM

  • YTEOL:

    6.85

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    65 V

  • Drain Current-Max (ID):

    9 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    O-CRFM-F4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    220 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    RADIAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRF173 Frequently Asked Questions (FAQs)

  • The maximum SOA for the MRF173 is typically defined by the device's voltage and current ratings. However, MACOM recommends consulting their application notes and design guides for specific SOA guidelines, as it may vary depending on the application and operating conditions.
  • To optimize thermal performance, ensure proper heat sinking, use a thermally conductive material, and maintain a low thermal resistance between the device and heat sink. Additionally, consider using a thermal interface material and follow MACOM's recommended thermal design guidelines.
  • MACOM recommends a multi-layer PCB with a solid ground plane, and a low-inductance layout to minimize parasitic effects. Use a star-grounding scheme, and ensure the device's ground pins are connected to the ground plane with minimal inductance. Consult MACOM's application notes for specific layout guidelines.
  • Handle the MRF173 with ESD-protective equipment, such as wrist straps and mats. Ensure the device is stored in an ESD-protective package, and follow MACOM's recommended ESD handling procedures to prevent damage.
  • Consult MACOM's application notes and design guides for specific drive and biasing recommendations, as they may vary depending on the application and operating conditions. Generally, ensure the device is operated within its recommended voltage and current ratings, and follow proper biasing techniques to achieve optimal performance.

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MRF173 Overview

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Part Image MRF173 Advanced Semiconductor Inc

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET