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MRF300BN - NXP

Description: RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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PCB Footprints
MRF300BN - NXP PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO--247--3L
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3D Models
MRF300BN - NXP  - 3D model - Transistor Outline, Vertical - TO--247--3L
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MRF300BN Details

  • Manufacturer Part Number:

    MRF300BN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-1930-1, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.31 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MRF300BN Frequently Asked Questions (FAQs)

  • The maximum SOA for the MRF300BN is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 28V and the maximum current rating is 3A. However, it's essential to consult the SOA curves in the datasheet to ensure the device operates within the safe region.
  • Thermal management is crucial for the MRF300BN. Ensure good heat dissipation by using a heat sink with a thermal resistance of less than 10°C/W. Also, keep the device away from other heat sources, and use a thermal interface material (TIM) to fill any air gaps between the device and heat sink.
  • For optimal performance, use a multi-layer PCB with a solid ground plane and a separate power plane. Keep the leads as short as possible, and use a Kelvin connection for the emitter lead to minimize inductance. Also, ensure good decoupling with capacitors close to the device.
  • Handle the MRF300BN with care to prevent ESD damage. Use an ESD wrist strap or mat, and ensure all equipment is grounded. Store the devices in anti-static packaging, and avoid touching the leads or die. If you must handle the device, discharge any static electricity from your body before handling.
  • The MRF300BN is manufactured according to NXP's quality and reliability standards, which include compliance with automotive and industrial standards such as AEC-Q101 and IEC 60747. The device is also qualified according to NXP's internal quality and reliability standards.

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MRF300BN Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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