FQP27P06 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP27P06 onsemi	1	Low Crss ( Typ. 120pF); -27A, -60V, RDS(on) = 70mΩ(Max.) @VGS = -10 V, ID = -13.5A; 175°C maximum junction temperature rating; 100% avalanche tested; Low gate charge ( Typ. 33nC)	Transistor Outline, Vertical	FQP27P06	3D model available Symbol and footprint available 3	1 Download Model
	FQP27P06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP27P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP27P06-F080 Fairchild Semiconductor Corporation	1	Transistor		FQP27P06-F080	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP27P06_SW82127 onsemi	1	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP27P06_SW82127	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQP27P06_SW82127 Fairchild Semiconductor Corporation	1	Transistor		FQP27P06_SW82127	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP27P06_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP27P06_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP27P06J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP27P06J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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