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MRFE6S9205HSR3 - NXP

Description: Trans RF FET N-CH 66V 3-Pin NI-880S T/R

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MRFE6S9205HSR3 Details

  • Manufacturer Part Number:

    MRFE6S9205HSR3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTION

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    66 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.63 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFP-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLATPACK

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    20 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6S9205HSR3 Frequently Asked Questions (FAQs)

  • NXP provides a recommended PCB layout in the application note AN1955, which includes guidelines for component placement, thermal management, and signal routing to ensure optimal performance and minimize electromagnetic interference (EMI).
  • The biasing network should be optimized for the specific application and operating conditions. NXP provides a biasing design tool and guidelines in the application note AN1987, which can help engineers optimize the biasing network for maximum efficiency and linearity.
  • The MRFE6S9205HSR3 has a high power density and requires proper thermal management to ensure reliable operation. NXP recommends using a heat sink with a thermal resistance of less than 1°C/W and ensuring good airflow around the device. The application note AN1955 provides more detailed guidelines on thermal management.
  • NXP recommends following standard ESD protection procedures, such as using an ESD wrist strap or mat, and handling the device by the body rather than the leads. The device also has built-in ESD protection, but it is not a substitute for proper handling and storage procedures.
  • NXP performs a range of reliability and qualification tests on the MRFE6S9205HSR3, including temperature cycling, humidity testing, and electrical overstress testing. The device is also qualified to the AEC-Q101 standard for automotive applications. More information on the qualification tests can be found in the device's qualification report.

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MRFE6S9205HSR3 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRFE6S9205HSR3 Freescale Semiconductor

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET