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MRFE6VP100HR5 - NXP

Description: Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

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MRFE6VP100HR5 Details

  • Manufacturer Part Number:

    MRFE6VP100HR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    NI-780-4, 4 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.24 pF

  • Highest Frequency Band:

    L BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    25 dB

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP100HR5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MRFE6VP100HR5 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet, and ensure that the device is operated within the recommended operating conditions.
  • For optimal thermal management, use a PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • To handle the high power density, ensure proper heat sinking, use a thermal interface material, and follow the recommended thermal management guidelines in the datasheet and application notes.
  • Follow the recommended test and measurement procedures outlined in the datasheet and application notes, and use calibrated test equipment to ensure accurate measurements.

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MRFE6VP100HR5 Overview

Use the download button to access the MRFE6VP100HR5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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