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MRFE6VP6300HR5 - NXP

Description: RF MOSFET Transistors VHV6 300W50VISM NI780H-4

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MRFE6VP6300HR5 Details

  • Manufacturer Part Number:

    MRFE6VP6300HR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    130 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP6300HR5 Frequently Asked Questions (FAQs)

  • The MRFE6VP6300HR5 can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
  • The device requires a bias voltage of 28V and a quiescent current of 120mA. Ensure the bias circuit is designed to provide a stable voltage and current to the device.
  • Use a multi-layer PCB with a solid ground plane and a thermal pad connected to a heat sink. Ensure good thermal conductivity and minimal thermal resistance between the device and the heat sink.
  • Use a π-network or a T-network topology for impedance matching. The input impedance is 50Ω, and the output impedance is 25Ω. Use simulation tools or impedance matching software to optimize the matching network.
  • The MRFE6VP6300HR5 can handle up to 630W of peak power. However, the average power handling capability depends on the operating frequency, duty cycle, and cooling conditions.

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MRFE6VP6300HR5 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRFE6VP6300HR3 NXP Semiconductors

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET