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MRFE6VS25GNR1 - NXP

Description: NXP - MRFE6VS25GNR1 - TRANSISTOR, RF, 133V, TO-270-2

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MRFE6VS25GNR1 Details

  • Manufacturer Part Number:

    MRFE6VS25GNR1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.26 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDFM-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    25 W

  • Power Gain-Min (Gp):

    24 dB

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VS25GNR1 Frequently Asked Questions (FAQs)

  • The MRFE6VS25GNR1 is designed to operate up to 2.7 GHz, making it suitable for applications such as wireless infrastructure, radar, and satellite communications.
  • To optimize performance, ensure proper impedance matching, use a suitable heat sink, and follow the recommended PCB layout guidelines. Additionally, consider using a thermal interface material to improve heat transfer.
  • The MRFE6VS25GNR1 can handle up to 25 W of continuous wave (CW) power, making it suitable for high-power applications such as base stations and repeaters.
  • To protect the device from ESD, follow proper handling and storage procedures, use an ESD wrist strap or mat, and ensure that the device is properly grounded during assembly and testing.
  • The recommended operating temperature range for the MRFE6VS25GNR1 is -40°C to +150°C, with a maximum junction temperature of 200°C.

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MRFE6VS25GNR1 Overview

Use the download button to access the MRFE6VS25GNR1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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