Part Image

MRFE6VS25LR5 - NXP

Description: RF MOSFET Transistors VHV6E 25W50V NI360L

Download MRFE6VS25LR5 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
MRFE6VS25LR5 - NXP  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

MRFE6VS25LR5 Details

  • Manufacturer Part Number:

    MRFE6VS25LR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.17 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDFM-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    24.5 dB

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VS25LR5 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the MRFE6VS25LR5 is 2.7 GHz, making it suitable for applications such as wireless infrastructure, radar, and satellite communications.
  • To optimize the performance of the MRFE6VS25LR5, ensure proper impedance matching, use a suitable heat sink to maintain a low junction temperature, and follow the recommended PCB layout and grounding guidelines.
  • The MRFE6VS25LR5 can handle a maximum power input of 25 W, making it suitable for high-power applications such as base stations and repeaters.
  • To protect the MRFE6VS25LR5 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB design includes ESD protection circuits and components.
  • The thermal resistance of the MRFE6VS25LR5 is 1.4°C/W, which is relatively low, making it suitable for high-power applications where heat dissipation is critical.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

MRFE6VS25LR5 Overview

Use the download button to access the MRFE6VS25LR5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

Parts related to MRFE6VS25LR5

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview