Part Image

MSC025SMA120B - Microsemi Corporation

Description: SiC MOSFETs

Download MSC025SMA120B Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MSC025SMA120B - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_a
click to zoom
3D Models
MSC025SMA120B - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-247_a
click to zoom

MSC025SMA120B Details

  • Manufacturer Part Number:

    MSC025SMA120B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    TO-247, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-06-07

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    103 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    275 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

MSC025SMA120B Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MSC025SMA120B is -55°C to 125°C.
  • To ensure reliability, follow the recommended storage and handling procedures, use a clean and dry environment, and avoid exposing the device to mechanical stress or electrical overstress.
  • The maximum allowable power dissipation for the MSC025SMA120B is 1.5 W at 25°C, and it decreases with increasing temperature.
  • Yes, the MSC025SMA120B is designed to be radiation-hardened and can withstand total ionizing dose (TID) effects up to 100 krad(Si). However, it's essential to consult the radiation report and follow the recommended guidelines for radiation-hardened applications.
  • The recommended soldering temperature profile for the MSC025SMA120B is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MSC025SMA120B Overview

Use the download button to access the MSC025SMA120B schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MSC02, or try a keyword search, such as Power Field-Effect Transistors

Parts related to MSC025SMA120B

Showing 0 results

MSC025SMA120B Alternates

Showing results

Image Part Number Model
Part Image C3M0021120D Wolfspeed

Power Field-Effect Transistor, 81A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image MSC025SMA120B Microchip Technology Inc

Power Field-Effect Transistor, 103A I(D), 1200V, 0.031ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD