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MSC060SMA070B4 - Microchip

Description: MOSFET MOSFET SIC 700 V 60 mOhm TO-247-4

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MSC060SMA070B4 - Microchip PCB footprint - Other - Other - MSC060SMA070B4-2
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MSC060SMA070B4 Details

  • Manufacturer Part Number:

    MSC060SMA070B4

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    4

  • Manufacturer Package Code:

    TO-247-4

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    18

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    39 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    143 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

MSC060SMA070B4 Frequently Asked Questions (FAQs)

  • Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Implement thermal management techniques such as heat sinks, thermal interfaces, and airflow management. Ensure the device is operated within the specified temperature range (-40°C to 150°C) and consider derating the power dissipation at higher temperatures.
  • Use a metal shield or a shielded enclosure to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI). Ensure the shield is properly grounded and consider using EMI filters or absorbers if necessary.
  • Follow the recommended power-up sequence in the datasheet. Ensure a slow voltage ramp-up (typically 1-10 ms) to prevent damage to the device. Use a voltage supervisor or a power sequencer to control the power-up sequence.
  • Follow standard PCB cleaning and handling procedures to prevent damage to the device. Avoid using harsh chemicals, and ensure the PCB is clean and dry before assembly. Handle the device by the package body, avoiding touching the pins or die.

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MSC060SMA070B4 Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image C3M0060065K Cree, Inc.

Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image MSC060SMA070B4 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247