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MSJPFR20N60-BP - MCC

Description: • Low On-resistance and Low Conduction Loss • Super Junction technology for High Voltage Application • Soft Switching with Fast Reverse Recovery Diode • Ultra Low Gate Charge Cause Lower Driving Requirement • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free."Green "Device(Note 1) • Lead Free Finish/RoHS Compliant. "P" Suffix Designates RoHS Compliant. See Ordering Information

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PCB Footprints
MSJPFR20N60-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB
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3D Models
MSJPFR20N60-BP - MCC  - 3D model - Transistor Outline, Vertical - TO220AB
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MSJPFR20N60-BP Details

  • Manufacturer Part Number:

    MSJPFR20N60-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220AB(H), 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    17.9 A

  • Drain-source On Resistance-Max:

    0.193 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    71.6 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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