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MT29F16G08ABCCBH1-10ITZ:C - Micron

Description: NAND Flash SLC 16G 2GX8 VBGA

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MT29F16G08ABCCBH1-10ITZ:C Details

  • Manufacturer Part Number:

    MT29F16G08ABCCBH1-10ITZ:C

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    VBGA-100

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Time-Max:

    20 ns

  • Command User Interface:

    YES

  • Data Polling:

    NO

  • JESD-30 Code:

    R-PBGA-B100

  • Length:

    18 mm

  • Memory Density:

    17179869184 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Sectors/Size:

    4K

  • Number of Terminals:

    100

  • Number of Words:

    2147483648 words

  • Number of Words Code:

    2000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2GX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VBGA

  • Package Equivalence Code:

    BGA100,10X17,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE

  • Page Size:

    4K words

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    2.7 V

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1 mm

  • Sector Size:

    512K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.05 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Toggle Bit:

    NO

  • Type:

    SLC NAND TYPE

  • Width:

    12 mm

MT29F16G08ABCCBH1-10ITZ:C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT29F16G08ABCCBH1-10ITZ:C is -40°C to 85°C.
  • The power-up sequence involves applying VCC before VPP, and the power-down sequence involves removing VPP before VCC. Refer to the datasheet for specific timing requirements.
  • The recommended method is to use the Chip Erase command (0x60) to erase the entire device, or use the Sector Erase command (0x30) to erase individual sectors.
  • Implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to detect and correct errors during programming or erasing operations.
  • The MT29F16G08ABCCBH1-10ITZ:C supports up to 3,000 program/erase cycles per sector.

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MT29F16G08ABCCBH1-10ITZ:C Overview

Use the download button to access the MT29F16G08ABCCBH1-10ITZ:C 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image MT29F16G08ABCCBH1-10Z:C Micron Technology Inc

Flash, 2GX8, 20ns, PBGA100

Part Image MT29F16G08ABCCBH1-10IT:C Micron Technology Inc

Flash, 2GX8, 20ns, PBGA100