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MT29F4G01ABAFD12-AAT:F - Micron

Description: Flash Memory, SLC NAND, 4 Gbit, 4G x 1bit, Serial, TBGA, 24 Pins , 2.7V ~ 3.6V , -40°C ~ 105°C (TC)

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MT29F4G01ABAFD12-AAT:F - Micron PCB footprint - BGA - BGA - 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm_2024
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MT29F4G01ABAFD12-AAT:F - Micron  - 3D model - BGA - 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm_2024
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MT29F4G01ABAFD12-AAT:F Details

  • Manufacturer Part Number:

    MT29F4G01ABAFD12-AAT:F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TBGA-24

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    7.6

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B24

  • Length:

    8 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    24

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Equivalence Code:

    BGA24,5X5,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.2 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Type:

    SLC NAND TYPE

  • Width:

    6 mm

  • Write Protection:

    HARDWARE/SOFTWARE

MT29F4G01ABAFD12-AAT:F Frequently Asked Questions (FAQs)

  • The MT29F4G01ABAFD12-AAT:F supports up to 3,000 program/erase cycles.
  • To transition from the active to the standby power state, assert the CE# (Chip Enable) signal low and ensure that the WE# (Write Enable) and OE# (Output Enable) signals are high. This will reduce power consumption.
  • For page programming, use the page program command (0x10) and ensure that the data is written in multiples of 528 bytes (the page size). For block erasing, use the block erase command (0xD8) and ensure that the block address is aligned to the block size (128KB).
  • Monitor the R/B# (Ready/Busy) signal, which indicates the status of the flash memory. If the signal is low, the flash memory is busy and not ready for a read or write operation. Wait until the signal goes high before proceeding.
  • Implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to detect and correct errors during read and write operations.

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MT29F4G01ABAFD12-AAT:F Overview

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