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MT29F4G01ABAFDWB-IT:F - Micron

Description: NAND Flash SLC 4G 4GX1 UPDFN IT M70A

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PCB Footprints
MT29F4G01ABAFDWB-IT:F - Micron PCB footprint - Small Outline No-lead - Small Outline No-lead - 8-pin U-PDFN (MLP8) 8mm x 6mm x 0.65mm – Package Code: WB
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3D Models
MT29F4G01ABAFDWB-IT:F - Micron  - 3D model - Small Outline No-lead - 8-pin U-PDFN (MLP8) 8mm x 6mm x 0.65mm – Package Code: WB
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MT29F4G01ABAFDWB-IT:F Details

  • Manufacturer Part Number:

    MT29F4G01ABAFDWB-IT:F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    UDFN-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    10

  • JESD-30 Code:

    R-PDSO-N8

  • Length:

    8 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Serial Bus Type:

    QSPI

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Type:

    SLC NAND TYPE

  • Width:

    6 mm

  • Write Protection:

    HARDWARE/SOFTWARE

MT29F4G01ABAFDWB-IT:F Frequently Asked Questions (FAQs)

  • The MT29F4G01ABAFDWB-IT:F supports up to 3,000 program/erase cycles per block, and up to 10,000 program/erase cycles per device.
  • The MT29F4G01ABAFDWB-IT:F has a built-in bad block management mechanism. During manufacturing, Micron tests the device and marks bad blocks. The device also has a mechanism to detect and mark bad blocks during use. The host system can read the bad block information from the device and avoid using those blocks.
  • The MT29F4G01ABAFDWB-IT:F is rated for industrial temperature range, which is -40°C to 85°C. However, it's recommended to operate the device within -20°C to 70°C for optimal performance and reliability.
  • The MT29F4G01ABAFDWB-IT:F has a power-fail detection and protection mechanism. When a power failure is detected, the device automatically aborts any ongoing program or erase operations and protects the data. Additionally, the host system can implement power-fail detection and shutdown mechanisms to prevent data corruption.
  • The typical programming time for the MT29F4G01ABAFDWB-IT:F is around 1.5-2.5 ms per 256-byte page. However, this time can vary depending on the operating conditions, such as temperature and voltage.

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MT29F4G01ABAFDWB-IT:F Overview

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