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MT3S111TU,LF - Toshiba

Description: RF TRANS NPN 6V 10GHZ UFM

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PCB Footprints
MT3S111TU,LF - Toshiba PCB footprint - Other - Other - MT3S111TU,LF-1
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3D Models
MT3S111TU,LF - Toshiba  - 3D model - Other - MT3S111TU,LF-1
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MT3S111TU,LF Details

  • Manufacturer Part Number:

    MT3S111TU,LF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    1.45 pF

  • Collector-Emitter Voltage-Max:

    6 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.8 W

  • Power Gain-Min (Gp):

    10.5 dB

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON GERMANIUM

  • Transition Frequency-Nom (fT):

    10000 MHz

MT3S111TU,LF Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal gradients and thermal stress.
  • Handle the device with ESD-protective materials, and store it in a conductive bag or container to prevent electrostatic discharge damage.
  • Yes, the MT3S111TU,LF is qualified to AEC-Q101 standards for automotive applications, and is suitable for high-reliability applications with proper design and validation.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 ohms and 100 ohms, and to optimize for minimal ringing and EMI.

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