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MT47H64M16HR-3IT - Micron

Description: IC DRAM 1GBIT PARALLEL 84FBGA

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PCB Footprints
MT47H64M16HR-3IT - Micron PCB footprint - BGA - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16
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MT47H64M16HR-3IT - Micron  - 3D model - BGA - 84-Ball FBGA Package (8mm x 12.5mm) – x16
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MT47H64M16HR-3IT Details

  • Manufacturer Part Number:

    MT47H64M16HR-3IT

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    FBGA-84

  • Pin Count:

    84

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.32

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.45 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B84

  • JESD-609 Code:

    e1

  • Length:

    12.5 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    DDR2 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    84

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA84,9X15,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.01 A

  • Supply Current-Max:

    0.23 mA

  • Supply Voltage-Max (Vsup):

    1.9 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    8 mm

MT47H64M16HR-3IT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MT47H64M16HR-3IT is 0°C to 95°C, with a maximum storage temperature range of -40°C to 100°C.
  • To ensure signal integrity and reduce noise on the memory bus, it is recommended to use a well-designed PCB with controlled impedance, add decoupling capacitors near the module, and use a clock signal with a high slew rate.
  • The recommended refresh rate for the MT47H64M16HR-3IT is 3.9 μs at 1.5V, with a maximum refresh interval of 64 ms.
  • The MT47H64M16HR-3IT is designed to operate at 1.5V, but it can tolerate a voltage range of 1.425V to 1.575V. However, operating the module outside of its recommended voltage range may affect its performance and reliability.
  • The MT47H64M16HR-3IT has built-in error detection and correction mechanisms, such as ECC and CRC. It is recommended to implement additional error handling mechanisms in the system, such as retry mechanisms and fault detection, to ensure data integrity and system reliability.

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MT47H64M16HR-3IT Overview

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Image Part Number Model
Part Image K4T1G164QQ-HCE60 Samsung Semiconductor

DDR2 DRAM, 64MX16, 0.45ns, CMOS, PBGA84

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Part Image K4T1G164QE-HIE60 Samsung Semiconductor

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Part Image MT47H64M16HR-3AIT:H Micron Technology Inc

DDR2 DRAM, 64MX16, 0.45ns, CMOS, PBGA84

Part Image MT47H64M16HR-3:E Micron Technology Inc

DDR2 DRAM, 64MX16, 0.45ns, CMOS, PBGA84

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