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MTB50P03HDLT4G - onsemi

Description: Specially Designed Leadframe for Maximum Power Dissipation; Avalanche Energy Specified; IDSS and VDS(on) Specified at Elevated Temperature; Short Heatsink Tab Manufactured Not Sheared; Diode is Characterized for Use in Bridge Circuits; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; Pb-Free Packages are Available

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MTB50P03HDLT4G - onsemi

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