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MTP20N15EG - onsemi

Description: Obsolete - Power MOSFET 23 Amps, 60 Volts

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MTP20N15EG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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MTP20N15EG - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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MTP20N15EG Details

  • Manufacturer Part Number:

    MTP20N15EG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    174 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    112 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    164 ns

  • Turn-on Time-Max (ton):

    178 ns

MTP20N15EG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MTP20N15EG is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes applying a gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the specified range. Additionally, ensure the device is operated within the recommended current limits to prevent overheating and damage.
  • For optimal thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation. Place the device on a thermal pad or a heat sink to improve heat dissipation. Ensure good thermal conductivity between the device and the heat sink or thermal pad. Follow the recommended PCB layout guidelines in the datasheet or application notes for more information.
  • To protect the MTP20N15EG from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store the device in an ESD-protected package. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD damage during operation.
  • The recommended gate drive circuits for the MTP20N15EG depend on the specific application and switching frequency. Typically, a gate driver IC or a discrete gate drive circuit with a suitable voltage and current rating is recommended. Ensure the gate drive circuit can provide a fast rise and fall time, and can handle the device's gate capacitance and gate charge requirements.

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MTP20N15EG Overview

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Part Image MTP20N15E onsemi

Power Field-Effect Transistor, 20A I(D), 150V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB