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MTP2955V - onsemi

Description: MOSFET P-CH 60V 12A TO-220AB

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MTP2955V - onsemi - PCB symbol
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PCB Footprints
MTP2955V - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MTP2955V
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3D Models
MTP2955V - onsemi - 3D model - Transistor Outline, Vertical - MTP2955V
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MTP2955V Details

  • Manufacturer Part Number:

    MTP2955V

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 221A-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    216 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MTP2955V Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power dissipation at high temperatures.
  • The SOA is typically defined by the device's voltage and current ratings. For the MTP2955V, the SOA is limited by the maximum voltage rating (Vds) of 55V and the maximum current rating (Id) of 2.5A. Operating within these limits ensures reliable device operation.
  • Handle the device by the body or use an ESD wrist strap to prevent static buildup. Use ESD-protected workstations and follow proper ESD handling procedures. The MTP2955V has built-in ESD protection, but additional precautions are still necessary.
  • A gate drive circuit with a low impedance output, such as a dedicated gate driver IC or a totem pole configuration, is recommended. This ensures fast switching times and minimizes power losses.

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MTP2955V Overview

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MTP2955V Alternates

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Part Image MTP2955VG onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB