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MTP2P50E - onsemi

Description: Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

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PCB Footprints
MTP2P50E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
MTP2P50E - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB
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MTP2P50E Details

  • Manufacturer Part Number:

    MTP2P50E

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MTP2P50E Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB to further improve thermal performance.
  • The MTP2P50E requires a bias voltage of 5V to 15V, and a bias current of 1mA to 5mA. A resistor divider network can be used to set the bias voltage, and a current limiting resistor can be used to set the bias current.
  • The maximum power dissipation of the MTP2P50E is 2.5W. However, the actual power dissipation will depend on the specific application and operating conditions. It's recommended to perform thermal analysis and simulation to ensure the device operates within its thermal limits.
  • Yes, the MTP2P50E is suitable for high-frequency applications up to 5GHz. However, the device's performance may degrade at higher frequencies due to parasitic capacitance and inductance. It's recommended to use a suitable PCB layout and component selection to minimize these effects.
  • The MTP2P50E is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.

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MTP2P50E Overview

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Part Image MTP2P50EG Rochester Electronics LLC

2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN