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MTP2P50EG - onsemi

Description: Obsolete - Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level

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PCB Footprints
MTP2P50EG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09
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3D Models
MTP2P50EG - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09
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MTP2P50EG Details

  • Manufacturer Part Number:

    MTP2P50EG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MTP2P50EG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the MTP2P50EG, the SOA is limited by the maximum voltage rating of 50V, maximum current rating of 2A, and maximum power rating of 100W.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the device in an ESD-safe environment. Also, consider adding ESD protection circuits in the design.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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MTP2P50EG Overview

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Image Part Number Model
Part Image MTP2P50EG Rochester Electronics LLC

2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN