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MTP8N50E - onsemi

Description: TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate

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MTP8N50E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MTP2955V---
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MTP8N50E - onsemi - 3D model - Transistor Outline, Vertical - MTP2955V---
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MTP8N50E Details

  • Manufacturer Part Number:

    MTP8N50E

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 221A-09

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MTP8N50E Frequently Asked Questions (FAQs)

  • The MTP8N50E is a power MOSFET, not a switching device, so it does not have a maximum operating frequency. However, it can be used in switching applications up to several hundred kHz.
  • To ensure the MTP8N50E is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value of 1-10 ohms is recommended.
  • The maximum SOA for the MTP8N50E is not explicitly stated in the datasheet. However, it is generally recommended to limit the drain-source voltage (Vds) to 50V and the drain current (Id) to 8A to ensure safe operation.
  • While the MTP8N50E is a power MOSFET, it is not suitable for linear amplifier applications due to its high threshold voltage (Vth) and relatively low transconductance. A linear amplifier requires a device with a low Vth and high transconductance.
  • The MTP8N50E has a high power dissipation capability, but it still requires proper thermal management to prevent overheating. A heat sink with a thermal resistance of 1-5°C/W is recommended, and the device should be mounted on a PCB with a thermal via or a thermal pad.

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MTP8N50E Overview

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