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MUN5135T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
MUN5135T1G - onsemi - PCB symbol
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PCB Footprints
MUN5135T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - MUN5135T1G
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3D Models
MUN5135T1G - onsemi - 3D model - SOT23 (3-Pin) - MUN5135T1G
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MUN5135T1G Details

  • Manufacturer Part Number:

    MUN5135T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 21.36

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MUN5135T1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Use a heat sink or thermal interface material to reduce thermal resistance. Monitor the device's thermal performance and adjust the system design accordingly.
  • The MUN5135T1G has internal ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and handling. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the MUN5135T1G is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards or customer requirements.
  • Use a systematic approach to troubleshoot issues, starting with visual inspection of the PCB and device. Check for proper soldering, component orientation, and PCB layout. Use oscilloscopes or logic analyzers to debug signal integrity issues. Consult the datasheet and application notes for specific guidance.

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MUN5135T1G Overview

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