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MUN5233T1G - onsemi

Description: Simplifies Circuit Design; Reduces Component Count; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5233T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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3D Models
MUN5233T1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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MUN5233T1G Details

  • Manufacturer Part Number:

    MUN5233T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 10

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5233T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the component away from heat sources and ensure good airflow.
  • Use a heat sink, ensure good thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage transient is ±20V, but it's recommended to limit it to ±10V to ensure reliable operation.
  • Yes, the MUN5233T1G is AEC-Q101 qualified and suitable for high-reliability and automotive applications, but ensure you follow the recommended design and testing guidelines.
  • Use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures to prevent ESD damage.

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MUN5233T1G Overview

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon