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MUN5330DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5330DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363
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3D Models
MUN5330DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363
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MUN5330DW1T1G Details

  • Manufacturer Part Number:

    MUN5330DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    3

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5330DW1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MUN5330DW1T1G should prioritize thermal dissipation. Ensure a solid ground plane, use thermal vias, and keep the component away from heat sources. A 2-3 layer board with a dedicated thermal layer is recommended.
  • For high-temperature operation, ensure proper heat sinking, use a thermal interface material, and follow the recommended derating curves. Also, consider using a thermally conductive adhesive or thermal tape to improve heat transfer.
  • The MUN5330DW1T1G has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap, work on an ESD mat, and handle the device by the body or leads, avoiding direct contact with the die.
  • Yes, the MUN5330DW1T1G is suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions, and consider additional testing and validation for your specific use case.
  • Store the MUN5330DW1T1G in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the body or leads to prevent damage.

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MUN5330DW1T1G Overview

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Part Image MUN5330DW1T1 Rochester Electronics LLC

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN

Part Image MUN5330DW1T1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon