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MUN5334DW1T1G - onsemi

Description: Digital Transistors SS SC88 BR XSTR DUAL 50V

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MUN5334DW1T1G Details

  • Manufacturer Part Number:

    MUN5334DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 2.14

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

MUN5334DW1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MUN5334DW1T1G should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. A minimum of 2 oz copper thickness is recommended. Refer to onsemi's application note AND8325/D for more details.
  • To ensure reliable operation in high-temperature environments, ensure the device is properly heatsinked, and the junction temperature (Tj) is kept below the maximum rating of 150°C. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Monitor the device's thermal performance using the thermal resistance (RθJA) parameter.
  • The MUN5334DW1T1G has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, and handle the device by the body or leads, avoiding direct contact with the die. Store the device in an anti-static bag or tube, and follow onsemi's ESD handling guidelines.
  • Yes, the MUN5334DW1T1G is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard, and onsemi provides a PPAP (Production Part Approval Process) documentation package for automotive customers. Contact onsemi for more information.
  • Follow the soldering and rework guidelines in onsemi's application note AND8326/D. Use a soldering temperature of 260°C (max) and a reflow profile with a peak temperature of 245°C (max). Avoid using wave soldering or drag soldering, and ensure the device is not exposed to temperatures above 260°C.

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MUN5334DW1T1G Overview

Use the download button to access the MUN5334DW1T1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image MUN5334DW1T1 Rochester Electronics LLC

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN